IRF530 NChannel FET Datasheet Electronic Component Datasheets
Fet Data Sheet. These devices are pb−free, halogen free and are rohs compliant nvb prefix for automotive. Ordering information j11x = device code x = 1 or 2 a = assembly location y = year ww = work week = pb−free package.
IRF530 NChannel FET Datasheet Electronic Component Datasheets
Ordering information j11x = device code x = 1 or 2 a = assembly location y = year ww = work week = pb−free package. Web microchip’s vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input. Low rds(on) high current capability. This n−channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, dmos technology. These devices are pb−free, halogen free and are rohs compliant nvb prefix for automotive. Web dimensions section on page 2 of this data sheet. As with other device data sheets, a device type number and brief description is usually.
Low rds(on) high current capability. As with other device data sheets, a device type number and brief description is usually. This n−channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, dmos technology. Low rds(on) high current capability. Web microchip’s vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input. These devices are pb−free, halogen free and are rohs compliant nvb prefix for automotive. Web dimensions section on page 2 of this data sheet. Ordering information j11x = device code x = 1 or 2 a = assembly location y = year ww = work week = pb−free package.
